N-Channel 600V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 32A D2PAK
MOSFET, N-CH, 32A, 600V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHB35N60EF-GE3-ND | SIHB35N60EF-GE3 | 99AC9553 | SIHB35N60EF-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 32A, 600V, To-263; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel |
