Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB33N60ET1-GE3

MOSFET N-CH 600V 33A TO263

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: Vishay Siliconix
Win Source Part Number: 802268-SIHB33N60ET1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 278W (Tc)
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 99mOhm at 16.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3508pF at 100V
Current - Continuous Drain (Id) at 25°C: 33A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V

600V 33A 99m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS Product overview: SIHB33N60ET1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60ET1-GE3 can be used for catalog matching and distributor lookup.