Vishay Precision Group N-Channel 600V 33A MOSFET Transistor SIHB33N60E-GE3

Description
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on) Product overview: SIHB33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60E-GE3 can be used for catalog matching and distributor lookup.
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Description
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on) Product overview: SIHB33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60E-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
N-Channel 600V 33A MOSFET Transistor
278-SIHB33N60E-GE3
N-Channel 600V 33A MOSFET Transistor 278-SIHB33N60E-GE3
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on) Product overview: SIHB33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60E-GE3 can be used for catalog matching and distributor lookup.

600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on) Product overview: SIHB33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHB33N60E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHB33N60E-GE3-ND
Single FETs, MOSFETs SIHB33N60E-GE3-ND
N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60E-GE3 - 211700-SIHB33N60E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60E-GE3
211700-SIHB33N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60E-GE3 211700-SIHB33N60E-GE3
Manufacturer: Vishay Win Source Part Number: 211700-SIHB33N60E-GE 3 Packaging: Bulk Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3508pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211700-SIHB33N60E-GE3
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3508pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB33N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB33N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB33N60E-GE3
MOSFET N-CH 600V 33A D2PAK

MOSFET N-CH 600V 33A D2PAK

Supplier's Site
Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay - 19X1931 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay
19X1931
Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay 19X1931
Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes

Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 600V, 33A, To-263-3; Transistor Polarity Vishay - 68W7037 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 33A, To-263-3; Transistor Polarity Vishay
68W7037
Mosfet, N Channel, 600V, 33A, To-263-3; Transistor Polarity Vishay 68W7037
MOSFET, N CHANNEL, 600V, 33A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 33A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIHB33N60E-GE3 SIHB33N60E-GE3-ND 211700-SIHB33N60E-GE3 SIHB33N60E-GE3 SIHB33N60E-GE3 19X1931 68W7037
Product Name N-Channel 600V 33A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60E-GE3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay Mosfet, N Channel, 600V, 33A, To-263-3; Transistor Polarity Vishay
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 278000 milliwatts 278000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-3; TO-263
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