Manufacturer: Vishay
Win Source Part Number: 211700-SIHB33N60E-GE
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3508pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on) Product overview: SIHB33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 33A D2PAK
Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 600V, 33A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 211700-SIHB33N60E-GE3 | SIHB33N60E-GE3-ND | 278-SIHB33N60E-GE3 | SIHB33N60E-GE3 | 19X1931 | 68W7037 | SIHB33N60E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60E-GE3 | Single FETs, MOSFETs | N-Channel 600V 33A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay | Mosfet, N Channel, 600V, 33A, To-263-3; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | ||||||
| PD | 278000 milliwatts | 278000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
