N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1277864-SIHB24N65E-G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHB24N65EGE3
Base Product Number: SIHB24
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Power MOSFET, N Channel, 24 A, 650 V, 0.12 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET N-CH 650V 24A D2PAK
| DigiKey | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 742-SIHB24N65E-GE3-ND | 2567413P | 1277864-SIHB24N65E-GE3 | SIHB24N65E-GE3 | 63W4105 | SIHB24N65E-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Power Mosfet, N Channel, 24 A, 650 V, 0.12 Ohm, 10 V, 2 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel |
