Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB20N50E-T1-GE3

The SiHB20N50E is an N-channel MOSFET designed for switch-mode power supplies, PFC, and hard-switched topologies, housed in a D2PAK (TO-263) package. It features a drain-source voltage rating of 500 V, a maximum on-state resistance of 0.184 Ω at 10 V gate-source bias, and a total gate charge of 92 nC. The device has a continuous drain current of 12 A at 150 ⁰C, a single-pulse avalanche energy rating of 204 mJ, and a maximum power dissipation of 179 W. Operating junction and storage temperatures range from -55 ⁰C to +150 ⁰C. The part is lead-free and halogen-free, with a peak soldering temperature of 300 ⁰C for 10 seconds. Thermal resistance from junction to case is 0.7 ⁰C/W, and from junction to ambient is 62 ⁰C/W.