Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB17N80AE-T5-GE3

The SiHB17N80AE is an N-channel MOSFET designed for high-voltage switching applications such as server power supplies, SMPS, PFC, and industrial motor drives. It is packaged in a D2PAK (TO-263) case and rated for a drain-source voltage of 800 V with a typical on-state resistance of 0.250 Ω at 10 V gate drive. The device supports a continuous drain current of 15 A at 25 °C and 10 A at 150 °C, with a single-pulse avalanche energy rating of 127 mJ. Total gate charge is 62 nC maximum, and the junction temperature range is -55 °C to +150 °C. Thermal resistance from junction to case is 0.7 °C/W.