600V 15A N-CH MOSFET D2PAK, 280mR Rds(on) Product overview: SIHB15N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB15N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096410-SIHB15N60E-G
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1350pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 600V 15A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 600V, 15A, 150DEG C, 180W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 600V 15A D2PAK
MOSFET N-CH 600V 15A DPAK
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
(PRICE/TC) MOSFET, N CHANNEL, 600V, 15A, TO-263-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:15A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.23OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHB15N60E-GE3 | 2567411P | 1096410-SIHB15N60E-GE3 | SIHB15N60E-GE3-ND | 67W0170 | SIHB15N60E-GE3 | 880-SIHB15N60E-GE3 | SIHB15N60E-GE3 | 88693328 |
| Product Name | 600V 15A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB15N60E-GE3 | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 15A, 150Deg C, 180W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 600V 15A DPAK | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||||
| PD | 180000 milliwatts | 180000 milliwatts | 180000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-263; TO-263 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||||
| V(BR)DSS | 600 volts | 600 volts |
