Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB125N60EF-T5GE3

The SiHB125N60EF-T5GE3 is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-efficiency power conversion in server, telecom, and industrial applications. It has a drain-source voltage rating of 600 V, a typical on-state resistance of 0.109 Ω at 25 °C, and a maximum gate charge of 47 nC. The device features a fast body diode with reverse recovery time up to 234 ns and is rated for single-pulse avalanche energy of 88 mJ. It supports continuous drain current of up to 25 A at 25 °C case temperature and operates within a junction temperature range of -55 °C to +150 °C. The part is lead-free, halogen-free, and meets RoHS requirements.