Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB125N60EF-T1GE3

The SiHB125N60EF is an N-channel MOSFET with a 600 V drain-source voltage rating, designed for high-efficiency switching applications such as server power supplies, SMPS, PFC, and motor drives. It comes in a D2PAK (TO-263) package. The device has a typical on-state resistance of 0.109 Ω at 25 °C and 10 V gate-source voltage, with a maximum gate charge of 47 nC. It features a fast body diode with a reverse recovery time up to 234 ns and is rated for single-pulse avalanche energy of 88 mJ. Maximum power dissipation is 179 W, with a junction-to-case thermal resistance of 0.7 °C/W and an operating junction temperature range of -55 °C to +150 °C.