MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):0.38OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N-Channel 800V 12A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1338640-SIHB11N80E-G
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Power Dissipation (Max): 179W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: D2PAK (TO-263)
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB11
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 800V 12A D2PAK
MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Radwell International | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 137786939 | 742-SIHB11N80E-GE3-ND | 1338640-SIHB11N80E-GE3 | SIHB11N80E-GE3 | SIHB11N80E-GE3 | 78AC6517 |
| Product Name | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | ||
| PD | 179000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
