Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs SIHB11N80E-GE3

Description
Win Source Part Number: 1338640-SIHB11N80E-G E3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Power Dissipation (Max): 179W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB11 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1338640-SIHB11N80E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 742-SIHB11N80E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB11N80E-GE3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Transistor - 137786939 - Radwell International
    Radwell International
  • Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay - 78AC6517 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1338640-SIHB11N80E-G E3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Power Dissipation (Max): 179W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB11 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1338640-SIHB11N80E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1338640-SIHB11N80E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1338640-SIHB11N80E-GE3
Win Source Part Number: 1338640-SIHB11N80E-G E3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Power Dissipation (Max): 179W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB11 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V

Win Source Part Number: 1338640-SIHB11N80E-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Power Dissipation (Max): 179W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: D2PAK (TO-263)
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB11
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHB11N80E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHB11N80E-GE3-ND
Single FETs, MOSFETs 742-SIHB11N80E-GE3-ND
N-Channel 800V 12A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 12A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB11N80E-GE3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB11N80E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB11N80E-GE3
MOSFET N-CH 800V 12A D2PAK

MOSFET N-CH 800V 12A D2PAK

Supplier's Site
Transistor - 137786939 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
137786939
Transistor 137786939
MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):0.38OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):0.38OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHB11N80E-GE3
MOSFET SIHB11N80E-GE3
MOSFET 800V Vds 30V Vgs D2PAK (TO-263)

MOSFET 800V Vds 30V Vgs D2PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay - 78AC6517 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay
78AC6517
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay 78AC6517
MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited Radwell International VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1338640-SIHB11N80E-GE3 742-SIHB11N80E-GE3-ND SIHB11N80E-GE3 137786939 SIHB11N80E-GE3 78AC6517
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity Vishay
Polarity N-Channel N-Channel
PD 179000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3
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