Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB100N65E-GE3

The SiHB100N65E is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-efficiency switching applications such as server and telecom power supplies, PFC, and industrial motor drives. It has a drain-source voltage rating of 650 V, a typical on-state resistance of 0.087 Ω at 25 °C, and a continuous drain current of 19 A at 100 °C case temperature. The device features a Kelvin source connection to reduce gate noise, is rated for 127 mJ single-pulse avalanche energy, and operates from -55 °C to +150 °C. Its thermal resistance from junction to case is 0.6 °C/W, and junction-to-ambient is up to 62 °C/W. The part is lead-free, halogen-free, and meets RoHS compliance. The D2PAK package measures 9.65 mm maximum width by 10.67 mm maximum length, with a height up to 15.88 mm.