The SiHB100N60E is an N-channel MOSFET designed for high-efficiency power conversion in applications such as server power supplies, SMPS, PFC, and motor drives. It is packaged in a D2PAK (TO-263) case with dimensions of 9.65 mm maximum width and 15.88 mm maximum length. The device has a drain-source voltage rating of 600 V, a maximum continuous drain current of 19 A at 100 °C case temperature, and a typical on-state resistance of 0.086 Ω at 25 °C and 10 V gate-source voltage. It features an avalanche energy rating of 226 mJ and a maximum power dissipation of 208 W. Thermal resistance is 0.6 °C/W junction-to-case and 62 °C/W junction-to-ambient. The part meets RoHS standards and is lead-free and halogen-free. Operating junction and storage temperatures range from -55 °C to +150 °C.
Datasheet Summary Powered by GS/AI
The SiHB100N60E is an N-channel MOSFET designed for high-efficiency power conversion in applications such as server power supplies, SMPS, PFC, and motor drives. It is packaged in a D2PAK (TO-263) case with dimensions of 9.65 mm maximum width and 15.88 mm maximum length. The device has a drain-source voltage rating of 600 V, a maximum continuous drain current of 19 A at 100 °C case temperature, and a typical on-state resistance of 0.086 Ω at 25 °C and 10 V gate-source voltage. It features an avalanche energy rating of 226 mJ and a maximum power dissipation of 208 W. Thermal resistance is 0.6 °C/W junction-to-case and 62 °C/W junction-to-ambient. The part meets RoHS standards and is lead-free and halogen-free. Operating junction and storage temperatures range from -55 °C to +150 °C.
