N-Channel 600V 30A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
MOSFET N-CH 600V 30A D2PAK
MOSFET, N-CH, 30A, 600V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
| DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHB100N60E-GE3-ND | SIHB100N60E-GE3 | SIHB100N60E-GE3 | 03AH2966 |
| Product Name | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30A, 600V, To-263; Transistor Polarity Vishay |
| Polarity | N-Channel |
