Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB085N60EF-GE3

SiHB085N60EF is an N-channel MOSFET in a D2PAK (TO-263) package designed for high-efficiency power conversion applications such as server and telecom power supplies, switch mode power supplies, and solar inverters. It has a drain-source voltage rating of 600 V, a maximum on-state resistance of 0.084 Ω at 10 V gate-source voltage, and a total gate charge of 63 nC. The device features a fast body diode with a reverse recovery time of up to 218 ns and is rated for 173 mJ of single-pulse avalanche energy. It operates from -55 °C to 150 °C with a maximum junction-to-case thermal resistance of 0.55 °C/W and maximum power dissipation of 184 W. The part is lead-free and halogen-free.