Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHA155N60EF-GE3

The SiHA155N60EF is an N-channel MOSFET with a 600 V drain-source voltage rating, designed for high-efficiency switching applications such as server and telecom power supplies, PFC circuits, and industrial motor drives. It is packaged in a Thin-Lead TO-220 FULLPAK, measuring 8.30 to 8.70 mm in length and 9.70 to 10.30 mm in width. The device has a typical on-state resistance of 0.137 Ω at 10 V gate drive and 25 °C, a total gate charge of 38 nC, and is rated for a maximum continuous drain current of 6 A at 100 °C case temperature. It supports single-pulse avalanche energy up to 111 mJ and is thermally limited to a junction temperature of 150 °C. The part is lead-free and halogen-free, meeting RoHS compliance.