Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHA14N60E-GE3

N-channel MOSFET in a Thin-Lead TO-220 FULLPAK package, rated for 600 V drain-source voltage and 13 A continuous drain current at 25 °C, with a max on-state resistance of 0.309 Ω at 10 V gate-source voltage and 7 A drain current. The device has a total gate charge of 64 nC, avalanche energy rating of 136 mJ, and operates over a junction and storage temperature range of -55 °C to +150 °C. It meets RoHS and lead-free requirements.