Vishay Precision Group Single FETs, MOSFETs SIHA12N60E-E3

Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
  • Single FETs, MOSFETs - SIHA12N60E-E3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 - 1096404-SIHA12N60E-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay - 55X3085 - Newark, An Avnet Company
    Newark, An Avnet Company
  • VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V - 880-SIHA12N60E-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHA12N60E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA12N60E-E3-ND
Single FETs, MOSFETs SIHA12N60E-E3-ND
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 - 1096404-SIHA12N60E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3
1096404-SIHA12N60E-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 1096404-SIHA12N60E-E3
Manufacturer: Vishay Win Source Part Number: 1096404-SIHA12N60E-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096404-SIHA12N60E-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 12A 600V 0.38ohm MOSFET Transistor
278-SIHA12N60E-E3
N-Channel 12A 600V 0.38ohm MOSFET Transistor 278-SIHA12N60E-E3
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: SIHA12N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 600V, 0.38ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 600V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA12N60E-E3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: SIHA12N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 600V, 0.38ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 600V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA12N60E-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA12N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHA12N60E-E3
MOSFET SIHA12N60E-E3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay - 55X3085 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay
55X3085
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay 55X3085
Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V - 880-SIHA12N60E-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
880-SIHA12N60E-E3
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V 880-SIHA12N60E-E3
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V

VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Power MOSFET
Product Number SIHA12N60E-E3-ND 1096404-SIHA12N60E-E3 278-SIHA12N60E-E3 SIHA12N60E-E3 SIHA12N60E-E3 55X3085 880-SIHA12N60E-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 N-Channel 12A 600V 0.38ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220 Full Pack TO-220; TO-220-3 Full Pack TO-3
V(BR)DSS 600 volts 600 volts
PD 33000 milliwatts 33000 milliwatts 33000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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