Vishay Precision Group Single FETs, MOSFETs SIHA12N60E-E3

Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
  • Single FETs, MOSFETs - SIHA12N60E-E3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 - 1096404-SIHA12N60E-E3 - Win Source Electronics
    Win Source Electronics
  • VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V - 880-SIHA12N60E-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay - 55X3085 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHA12N60E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA12N60E-E3-ND
Single FETs, MOSFETs SIHA12N60E-E3-ND
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 - 1096404-SIHA12N60E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3
1096404-SIHA12N60E-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 1096404-SIHA12N60E-E3
Manufacturer: Vishay Win Source Part Number: 1096404-SIHA12N60E-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096404-SIHA12N60E-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 12A 600V 0.38ohm MOSFET Transistor
278-SIHA12N60E-E3
N-Channel 12A 600V 0.38ohm MOSFET Transistor 278-SIHA12N60E-E3
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: SIHA12N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 600V, 0.38ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 600V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA12N60E-E3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: SIHA12N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 600V, 0.38ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 600V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA12N60E-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V - 880-SIHA12N60E-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
880-SIHA12N60E-E3
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V 880-SIHA12N60E-E3
VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V

VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHA12N60E-E3
MOSFET SIHA12N60E-E3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay - 55X3085 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay
55X3085
Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay 55X3085
Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA12N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number SIHA12N60E-E3-ND 1096404-SIHA12N60E-E3 278-SIHA12N60E-E3 880-SIHA12N60E-E3 SIHA12N60E-E3 55X3085 SIHA12N60E-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA12N60E-E3 N-Channel 12A 600V 0.38ohm MOSFET Transistor VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V MOSFET Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220 Full Pack TO-3 TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts 600 volts
PD 33000 milliwatts 33000 milliwatts 33000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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