Vishay Intertechnology, Inc. 30V 60A MOSFET Transistor SIE860DF-T1-E3

Description
MOSFET N-CH 30V 60A 10POLARPAK Product overview: SIE860DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE860DF-T1-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 30V 60A 10POLARPAK Product overview: SIE860DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE860DF-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 60A MOSFET Transistor
278-SIE860DF-T1-E3
30V 60A MOSFET Transistor 278-SIE860DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAK Product overview: SIE860DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE860DF-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 60A 10POLARPAK Product overview: SIE860DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE860DF-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3 - 042629-SIE860DF-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3
042629-SIE860DF-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3 042629-SIE860DF-T1-E3
Manufacturer: Vishay Win Source Part Number: 042629-SIE860DF-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (M) Dimension: 10-PolarPAK (M) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 4500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 21.7A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 042629-SIE860DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (M)
Dimension: 10-PolarPAK (M)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 4500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 21.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE860DF-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE860DF-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE860DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAK

MOSFET N-CH 30V 60A 10POLARPAK

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SIE860DF-T1-E3 042629-SIE860DF-T1-E3 SIE860DF-T1-E3
Product Name 30V 60A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 5200 milliwatts 5200 to 104000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; 10-PolarPAK (M) 4500 pF @ 15 V
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