MOSFET N-CH 30V 60A 10POLARPAK Product overview: SIE860DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE860DF-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 042629-SIE860DF-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (M)
Dimension: 10-PolarPAK (M)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 4500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 21.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 60A 10POLARPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIE860DF-T1-E3 | 042629-SIE860DF-T1-E3 | SIE860DF-T1-E3 |
| Product Name | 30V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 5200 milliwatts | 5200 to 104000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; 10-PolarPAK (M) | 4500 pF @ 15 V |