Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE860DF-T1-E3 SIE860DF-T1-E3

Manufacturer: Vishay Win Source Part Number: 042629-SIE860DF-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (M) Dimension: 10-PolarPAK (M) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 4500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 21.7A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited