The Vishay N-Channel MOSFET, part number SiE818DF, features a maximum drain-source voltage of 75V and a continuous drain current rating of 60A. It is housed in a PolarPAK-10 package, which allows for efficient thermal management through double-sided cooling. The device exhibits low on-state resistance, with RDS(on) values of 0.0095Oc at a gate-source voltage of 10V and 0.0125Oc at 4.5V. It is halogen-free and compliant with RoHS directives, making it suitable for environmentally conscious applications. The MOSFET is designed for various applications, including primary side switching, half-bridge configurations, and synchronous rectification. Its low gate charge characteristics help minimize switching losses, making it a viable option for high-efficiency designs.
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
75V 16A N-CH MOSFET, 9.5mR Rds On, Surface Mount Product overview: SIE818DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 75V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 75V, 16A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIE818DF-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 135018-SIE818DF-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3200pF @ 38V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): STK20N75F3; SIE818DF-T1-GE3; SiE818DF;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
MOSFET 75V Vds 20V Vgs PolarPAK
N CHANNEL MOSFET, 75V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes
MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
MOSFET N-CH 75V 60A 10POLARPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIE818DF-T1-E3DKR-ND | 2088-SIE818DF-T1-E3 | 135018-SIE818DF-T1-E3 | SIE818DF-T1-E3 | 75M5277 | 17X9997 | SIE818DF-T1-E3 |
| Product Name | Single FETs, MOSFETs | SMD 75V 16A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE818DF-T1-E3 | MOSFET | N Channel Mosfet, 75V, 60A Polarpak, Full Reel; Channel Type Vishay | Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | 10-PolarPAK® (L) | SOT3; 10-PolarPAK (L) | TO-3 | TO-3 | 10-PolarPAKR (L) | ||
| PD | 125000 milliwatts | 5200 to 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
