The Vishay N-Channel MOSFET, part number SiE818DF, features a maximum drain-source voltage of 75V and a continuous drain current rating of 60A. It is housed in a PolarPAK-10 package, which allows for efficient thermal management through double-sided cooling. The device exhibits low on-state resistance, with RDS(on) values of 0.0095Oc at a gate-source voltage of 10V and 0.0125Oc at 4.5V. It is halogen-free and compliant with RoHS directives, making it suitable for environmentally conscious applications. The MOSFET is designed for various applications, including primary side switching, half-bridge configurations, and synchronous rectification. Its low gate charge characteristics help minimize switching losses, making it a viable option for high-efficiency designs.
Manufacturer: Vishay
Win Source Part Number: 135018-SIE818DF-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3200pF @ 38V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): STK20N75F3; SIE818DF-T1-GE3; SiE818DF;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
MOSFET N-CH 75V 60A 10POLARPAK
MOSFET 75V Vds 20V Vgs PolarPAK
N CHANNEL MOSFET, 75V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes
MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 135018-SIE818DF-T1-E3 | SIE818DF-T1-E3DKR-ND | SIE818DF-T1-E3 | SIE818DF-T1-E3 | 75M5277 | 17X9997 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE818DF-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 75V, 60A Polarpak, Full Reel; Channel Type Vishay | Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 75 volts | |||||
| PD | 5200 to 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
