Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE806DF-T1-GE3

Win Source Part Number: 1277519-SIE806DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIE806 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V