Trans MOSFET N-CH 60V 42.8A 8-Pin PowerPAK SO-DC EP T/R Product overview: SIDR626DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 42.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 42.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIDR626DP-T1-GE3
Win Source Part Number: 1277628-SIDR626DP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIDR626DP-T1-GE3TR,S
Base Product Number: SIDR626
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 42.8A/100A PPAK
MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIDR626DP-T1-GE3 | 1277628-SIDR626DP-T1-GE3 | SIDR626DP-T1-GE3CT-ND | 78AC6503 | SIDR626DP-T1-GE3 | SIDR626DP-T1-GE3 |
| Product Name | 60V 42.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 100A, 150Deg C, 125W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | |||||
| PD | 6250 milliwatts | |||||
| TJ | -55 C (-67 F) | |||||
| Package Type | Tape and Reel | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | TO-3 | Surface Mount |
