The Vishay N-Channel MOSFET (part number 04AJ4574) is rated for a maximum drain-source voltage of 150V and a continuous drain current of 56.7A at a junction temperature of 150¬8C. It features a low on-state resistance of 0.0177Oc at a gate-source voltage of 10V, making it suitable for applications requiring efficient power management. The device is housed in a PowerPAK SO-8DC package, which allows for effective thermal management through top-side cooling. It is RoHS compliant and is designed for various applications, including synchronous rectification, primary side switching, high power density DC/DC converters, H-bridge configurations, and motor drive control. The MOSFET also supports a maximum power dissipation of 125W and has a wide operating temperature range from -55¬8C to +150¬8C.
N-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
MOSFET, N-CH, 150V, 56.7A, 150DEG C/125W ROHS COMPLIANT: YES
N-CHANNEL 150-V (D-S) MOSFET
N-CHANNEL 150-V (D-S) MOSFET
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIDR622DP-T1-RE3TR-ND | 04AJ4574 | SIDR622DP-T1-RE3 | SIDR622DP-T1-RE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 150V, 56.7A, 150Deg C/125W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
