Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIB419DK-T1-GE3

Win Source Part Number: 1277553-SIB419DK-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 11.82 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 562 pF @ 6 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB419DK-T1-GE3CT,SI B419DK-T1-GE3TR,SIB4 19DK-T1-GE3DKR,SIB41 9DKT1GE3 Base Product Number: SIB419 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V