Vishay Intertechnology, Inc. 8V 9A MOSFET Transistor SIB417EDK-T1-GE3

MOSFET P-CH 8V 9A PPAK SC75-6 Product overview: SIB417EDK-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB417EDK-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Win Source Part Number: 1157713-SIB417EDK-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 8 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 4 V
Vgs (Max): ±5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIB417EDK-T1-GE3.;
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB417EDK-T1-GE3DKR,SIB417EDK-T1-GE3CT,SIB417EDK-T1-GE3TR,SIB417EDKT1GE3
Base Product Number: SIB417
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V