Win Source Part Number: 1353921-SIAA00DJ-T1-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
Product Status: Active
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6
Base Product Number: SIAA00
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 12.5 V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99
Trans MOSFET N-CH 25V 20.1A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIAA00DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 20.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 20.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIAA00DJ-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
MOSFET, N-CH, 25V, 40A, 150DEG C, 19.2W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET 25V Vds 16V Vgs PowerPAK SC-70
MOSFET N-CH 25V 20.1A/40A PPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1353921-SIAA00DJ-T1-GE3 | 278-SIAA00DJ-T1-GE3 | 742-SIAA00DJ-T1-GE3DKR-ND | 78AC6483 | SIAA00DJ-T1-GE3 | SIAA00DJ-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 25V 20.1A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 25V, 40A, 150Deg C, 19.2W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 3500 to 19200 milliwatts | 19.2 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3 | Tape and Reel | PowerPAK® SC-70-6 | TO-3 | Surface Mount | |
| MOSFET Operating Mode | Enhancement |
