Vishay Precision Group FET, MOSFET Arrays SIA910EDJ-T1-GE3

Description
MOSFET 2N-CH 12V 4.5A SC-70-6
Request a Quote Datasheet
Description
MOSFET 2N-CH 12V 4.5A SC-70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SIA910EDJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIA910EDJ-T1-GE3
FET, MOSFET Arrays SIA910EDJ-T1-GE3
MOSFET 2N-CH 12V 4.5A SC-70-6

MOSFET 2N-CH 12V 4.5A SC-70-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA910EDJ-T1-GE3 - 028732-SIA910EDJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA910EDJ-T1-GE3
028732-SIA910EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA910EDJ-T1-GE3 028732-SIA910EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028732-SIA910EDJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 8V Max Input Capacitance: 455pF @ 6V Maximum Rds On at Id,Vgs: 28 mOhm @ 5.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028732-SIA910EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16nC @ 8V
Max Input Capacitance: 455pF @ 6V
Maximum Rds On at Id,Vgs: 28 mOhm @ 5.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
12V 4.5A MOSFET Transistor
278-SIA910EDJ-T1-GE3
12V 4.5A MOSFET Transistor 278-SIA910EDJ-T1-GE3
Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R Product overview: SIA910EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA910EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R Product overview: SIA910EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA910EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SIA910EDJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA910EDJ-T1-GE3CT-ND
FET, MOSFET Arrays SIA910EDJ-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA910EDJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA910EDJ-T1-GE3DKR-ND
FET, MOSFET Arrays SIA910EDJ-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA910EDJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA910EDJ-T1-GE3TR-ND
FET, MOSFET Arrays SIA910EDJ-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
Dual Mosfet, Dual N Channel, 4.5 A, 12 V, 0.023 Ohm, 4.5 V, 400 Mv Rohs Compliant Vishay - 97W2599 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 4.5 A, 12 V, 0.023 Ohm, 4.5 V, 400 Mv Rohs Compliant Vishay
97W2599
Dual Mosfet, Dual N Channel, 4.5 A, 12 V, 0.023 Ohm, 4.5 V, 400 Mv Rohs Compliant Vishay 97W2599
Dual MOSFET, Dual N Channel, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Dual N Ch, 12V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay - 86R3789 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Ch, 12V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay
86R3789
Mosfet, Dual N Ch, 12V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay 86R3789
MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Dual N Channel, 12V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay - 05W6927 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 12V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay
05W6927
Mosfet, Dual N Channel, 12V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay 05W6927
MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA910EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA910EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA910EDJ-T1-GE3
MOSFET 2N-CH 12V 4.5A SC70-6

MOSFET 2N-CH 12V 4.5A SC70-6

Supplier's Site
MOSFET 12V Vds 8V Vgs PowerPAK SC-70

MOSFET 12V Vds 8V Vgs PowerPAK SC-70

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIA910EDJ-T1-GE3 028732-SIA910EDJ-T1-GE3 278-SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3CT-ND 97W2599 86R3789 05W6927 SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA910EDJ-T1-GE3 12V 4.5A MOSFET Transistor FET, MOSFET Arrays Dual Mosfet, Dual N Channel, 4.5 A, 12 V, 0.023 Ohm, 4.5 V, 400 Mv Rohs Compliant Vishay Mosfet, Dual N Ch, 12V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay Mosfet, Dual N Channel, 12V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts 12 volts
IDSS 4500 milliamps 4500 milliamps 4500 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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