MOSFET 2N-CH 20V 4.5A SC70-6
Manufacturer: Vishay
Win Source Part Number: 028731-SIA906EDJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 350pF @ 10V
Maximum Rds On at Id,Vgs: 46 mOhm @ 3.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
2 N-CH JFET 20V 4.5A 46mR TSSOP SMT Product overview: SIA906EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA906EDJ-T1-GE3
MOSFET, DUAL N CHANNEL, 20V, 4.5A, POWERPAK-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.037ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET, DUAL N-CH, 20V, POWERPAK SC70; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; RoHS Compliant: Yes
MOSFET 20V Vds 12V Vgs PowerPAK SC-70
MOSFET 2N-CH 20V 4.5A SC70-6
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIA906EDJ-T1-GE3 | 028731-SIA906EDJ-T1-GE3 | SIA906EDJ-T1-GE3CT-ND | 278-SIA906EDJ-T1-GE3 | 15R4841 | 61AC1920 | SIA906EDJ-T1-GE3 | SIA906EDJ-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA906EDJ-T1-GE3 | FET, MOSFET Arrays | 20V 4.5A TSSOP MOSFET Transistor | Mosfet, Dual N Channel, 20V, 4.5A, Powerpak-6, Full Reel; Transistor Polarity Vishay | Mosfet, Dual N-Ch, 20V, Powerpak Sc70; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 4500 milliamps | 4500 milliamps | 4500 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
