Mosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Small Signal Field-Effect Transistor, Product overview: SIA527DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA527DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 894948-SIA527DJ-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Package: PowerPAK® SC-70-6 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIA527
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SC-70-6 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIA527DJ-T1-GE3CT, SIA527DJ-T1-GE3DKR, SIA527DJ-T1-GE3TR
MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
MOSFET N/P-CH 12V 4.5A SC-70-6
MOSFET N/P-CH 12V 4.5A SC70-6
DUAL MOSFET,N/P-CH/12V/4.
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIA527DJ-T1-GE3TR-ND | 278-SIA527DJ-T1-GE3 | 894948-SIA527DJ-T1-GE3 | SIA527DJ-T1-GE3 | SIA527DJ-T1-GE3 | SIA527DJ-T1-GE3 | 57AJ0369 |
| Product Name | FET, MOSFET Arrays | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA527DJ-T1-GE3 | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet,n/p-Ch/12V/4.5A/powerpaksc70 Rohs Compliant Vishay |
| Package Type | PowerPAK® SC-70-6 Dual | SOT3; PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | TO-3 | |||
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | ||||
| PD | 7800 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
