Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIA477EDJT-T1-GE3

Description
Win Source Part Number: 1316321-SIA477EDJT-T 1-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA477EDJT-T1-GE3DKR ,SIA477EDJT-T1-GE3CT ,SIA477EDJT-T1-GE3TR Base Product Number: SIA477 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Description
Win Source Part Number: 1316321-SIA477EDJT-T 1-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA477EDJT-T1-GE3DKR ,SIA477EDJT-T1-GE3CT ,SIA477EDJT-T1-GE3TR Base Product Number: SIA477 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1316321-SIA477EDJT-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1316321-SIA477EDJT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1316321-SIA477EDJT-T1-GE3
Win Source Part Number: 1316321-SIA477EDJT-T 1-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA477EDJT-T1-GE3DKR ,SIA477EDJT-T1-GE3CT ,SIA477EDJT-T1-GE3TR Base Product Number: SIA477 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Win Source Part Number: 1316321-SIA477EDJT-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA477EDJT-T1-GE3DKR,SIA477EDJT-T1-GE3CT,SIA477EDJT-T1-GE3TR
Base Product Number: SIA477
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Buy Now Datasheet
Single FETs, MOSFETs - SIA477EDJT-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA477EDJT-T1-GE3TR-ND
Single FETs, MOSFETs SIA477EDJT-T1-GE3TR-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Single FETs, MOSFETs - SIA477EDJT-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA477EDJT-T1-GE3CT-ND
Single FETs, MOSFETs SIA477EDJT-T1-GE3CT-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Single FETs, MOSFETs - SIA477EDJT-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA477EDJT-T1-GE3DKR-ND
Single FETs, MOSFETs SIA477EDJT-T1-GE3DKR-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Singapore, Singapore
12V 12A MOSFET Transistor
278-SIA477EDJT-T1-GE3
12V 12A MOSFET Transistor 278-SIA477EDJT-T1-GE3
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA477EDJT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA477EDJT-T1-GE 3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA477EDJT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA477EDJT-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIA477EDJT-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA477EDJT-T1-GE3
Single FETs, MOSFETs SIA477EDJT-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6

MOSFET P-CH 12V 12A PPAK SC70-6

Supplier's Site Datasheet
MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L

MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA477EDJT-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA477EDJT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA477EDJT-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6

MOSFET P-CH 12V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1316321-SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3TR-ND 278-SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 12V 12A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type SOT3 PowerPAK® SC-70-6 Tape and Reel PowerPAK® SC-70-6 Surface Mount
MOSFET Operating Mode Enhancement
V(BR)DSS 12 volts 12 volts
Transconductance 0.0300 kS
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