P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA477EDJT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA477EDJT-T1-GE
Win Source Part Number: 1316321-SIA477EDJT-T
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA477EDJT-T1-GE3DKR
Base Product Number: SIA477
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
MOSFET P-CH 12V 12A PPAK SC70-6
MOSFET P-CH 12V 12A PPAK SC70-6
MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIA477EDJT-T1-GE3TR-ND | 278-SIA477EDJT-T1-GE3 | 1316321-SIA477EDJT-T1-GE3 | SIA477EDJT-T1-GE3 | SIA477EDJT-T1-GE3 | SIA477EDJT-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 12V 12A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | PowerPAK® SC-70-6 | Tape and Reel | SOT3 | PowerPAK® SC-70-6 | Surface Mount | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 12 volts | 12 volts | ||||
| Transconductance | 0.0300 kS |
