MOSFET 20V Product overview: SIA437DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA437DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Single P-Ch PPAK SC70 1G 20V 14.5mohm @
Single P-Ch PPAK SC70 1G 20V 14.5mohm @
Single P-Ch PPAK SC70 1G 20V 14.5mohm @
P-Channel 20V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1096369-SIA437DJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 29.7A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 90nC @ 8V
Max Input Capacitance: 2340pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
MOSFET P-CH 20V 29.7A PPAK SC70
MOSFET P-CH 20V 29.7A PPAK SC70
MOSFET Transistor, P Channel, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA437DJ-T1-GE3 | 1807334 | SIA437DJ-T1-GE3DKR-ND | 1096369-SIA437DJ-T1-GE3 | SIA437DJ-T1-GE3 | SIA437DJ-T1-GE3 | SIA437DJ-T1-GE3 | 19X1927 |
| Product Name | 20V MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA437DJ-T1-GE3 | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -29.7 A, -20 V, 0.012 Ohm, -4.5 V, -400 Mv Rohs Compliant Vishay |
| PD | 3500 milliwatts | 3500 to 19000 milliwatts | 3500 milliwatts | |||||
| TJ | -55 C (-67 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||||
| Package Type | PowerPAK SC-70-6L | PowerPAK® SC-70-6 | SOT3; PowerPAK SC-70-6 Single | PowerPAK® SC-70-6 | PowerPAKR SC-70-6 | TO-3 | ||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel |
