Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R Product overview: SIA433EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA433EDJ-T1-GE3
P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Single P-Ch PPAK SC70 20V 18mohm @ 4.5V
Single P-Ch PPAK SC70 20V 18mohm @ 4.5V
Single P-Ch PPAK SC70 20V 18mohm @ 4.5V
Manufacturer: Vishay
Win Source Part Number: 028727-SIA433EDJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Family Name: SiA433EDJ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 75nC @ 8V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.6A, 4.5V
Alternative Parts (Cross-Reference): NTLUS3A18PZCTCG; NTLUS3A18PZCTBG; NTLUS3A18PZCTAG;
Introduction Date: October 26, 2009
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET P-CH 20V 12A PPAK SC70-6
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
MOSFET P-CH 20V 12A PPAK SC70-6
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mV; Power Dissipation:3.5W RoHS Compliant: Yes
MOSFET, P-CH, -20V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; RoHS Compliant: Yes
MOSFET, P-CH, -20V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA433EDJ-T1-GE3 | SIA433EDJ-T1-GE3TR-ND | 1807754P | 028727-SIA433EDJ-T1-GE3 | SIA433EDJ-T1-GE3 | SIA433EDJ-T1-GE3 | SIA433EDJ-T1-GE3 | 79R5403 | 01AC4957 |
| Product Name | 20V 12A MOSFET Transistor | Single FETs, MOSFETs | IGBTs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA433EDJ-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | P Channel Mosfet; Channel Type Vishay | Mosfet, P-Ch, -20V, -12A, Powerpak Sc70; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| Transconductance | 0.0350 kS | ||||||||
| PD | 19 milliwatts | 3500 to 19000 milliwatts | 3500 milliwatts | 3500 milliwatts |
