Manufacturer: Vishay
Win Source Part Number: 028719-SIA421DJ-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 950pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-CH MOSFET 30V 7.9A 35mR SC-70 SMT Product overview: SIA421DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA421DJ-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 12A PPAK SC70-6
MOSFET, P-CH, 30V, 1A, SC-70 ROHS COMPLIANT: YES
MOSFET P-CH 30V 12A PPAK SC70-6
MOSFET 30V 12A 19W 35mohm @ 10V
MOSFET -30V Vds 20V Vgs PowerPAK SC-70
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028719-SIA421DJ-T1-GE3 | SIA421DJ-T1-GE3CT-ND | 278-SIA421DJ-T1-GE3 | SIA421DJ-T1-GE3 | 57AJ0362 | SIA421DJ-T1-GE3 | 880-SIA421DJ-T1-GE3 | SIA421DJ-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA421DJ-T1-GE3 | Single FETs, MOSFETs | 30V 7.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 1A, Sc-70 Rohs Compliant Vishay | Single FETs, MOSFETs | MOSFET 30V 12A 19W 35mohm @ 10V | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | -30 volts | |||||
| PD | 3500 to 19000 milliwatts | 3500 milliwatts | 3500 milliwatts | 3500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PowerPAK SC-70-6 Single | PowerPAK® SC-70-6 | PowerPAKR SC-70-6 | TO-3 | PowerPAK® SC-70-6 |
