Vishay Intertechnology, Inc. Discrete Semiconductor Products SIA413DJ-T4-GE3

Description
Manufacturer: Vishay Win Source Part Number: 190200-SIA413DJ-T4-G E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SC-70-6 Manufacturer Device Package: PowerPAK SC-70-6 Single FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250μA Gate Charge (Qg) @ Vgs: 57nC @ 8V Input Capacitance (Ciss) @ Vds: 1800pF @ 10V Power - Max: 19W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 190200-SIA413DJ-T4-G E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SC-70-6 Manufacturer Device Package: PowerPAK SC-70-6 Single FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250μA Gate Charge (Qg) @ Vgs: 57nC @ 8V Input Capacitance (Ciss) @ Vds: 1800pF @ 10V Power - Max: 19W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Discrete Semiconductor Products - 190200-SIA413DJ-T4-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
190200-SIA413DJ-T4-GE3
Discrete Semiconductor Products 190200-SIA413DJ-T4-GE3
Manufacturer: Vishay Win Source Part Number: 190200-SIA413DJ-T4-G E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SC-70-6 Manufacturer Device Package: PowerPAK SC-70-6 Single FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250μA Gate Charge (Qg) @ Vgs: 57nC @ 8V Input Capacitance (Ciss) @ Vds: 1800pF @ 10V Power - Max: 19W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 190200-SIA413DJ-T4-GE3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SC-70-6
Manufacturer Device Package: PowerPAK SC-70-6 Single
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250μA
Gate Charge (Qg) @ Vgs: 57nC @ 8V
Input Capacitance (Ciss) @ Vds: 1800pF @ 10V
Power - Max: 19W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 190200-SIA413DJ-T4-GE3
Product Name Discrete Semiconductor Products
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