Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9926CDY-T1-GE3 SI9926CDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028715-SI9926CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028715-SI9926CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
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Datasheet
Datasheet Summary
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The Vishay Si9926CDY is a dual N-channel MOSFET with a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of 8A. It features a low on-resistance (R_DS(on)) of 0.018Oc at a gate-source voltage (V_GS) of 4.5V, making it suitable for applications requiring efficient power management. The device is halogen-free and compliant with RoHS standards, ensuring it meets environmental regulations. It is designed for use in DC/DC converters and is applicable in gaming machines and PCs. The MOSFET has a total gate charge (Q_g) of 10 nC, which contributes to its fast switching capabilities. The operating temperature range is from -55¬8C to 150¬8C, providing versatility in various environments.

Datasheet Summary
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The Vishay Si9926CDY is a dual N-channel MOSFET with a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of 8A. It features a low on-resistance (R_DS(on)) of 0.018Oc at a gate-source voltage (V_GS) of 4.5V, making it suitable for applications requiring efficient power management. The device is halogen-free and compliant with RoHS standards, ensuring it meets environmental regulations. It is designed for use in DC/DC converters and is applicable in gaming machines and PCs. The MOSFET has a total gate charge (Q_g) of 10 nC, which contributes to its fast switching capabilities. The operating temperature range is from -55¬8C to 150¬8C, providing versatility in various environments.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9926CDY-T1-GE3 - 028715-SI9926CDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9926CDY-T1-GE3
028715-SI9926CDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9926CDY-T1-GE3 028715-SI9926CDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028715-SI9926CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028715-SI9926CDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1200pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - SI9926CDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9926CDY-T1-GE3TR-ND
FET, MOSFET Arrays SI9926CDY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI9926CDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9926CDY-T1-GE3DKR-ND
FET, MOSFET Arrays SI9926CDY-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI9926CDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9926CDY-T1-GE3CT-ND
FET, MOSFET Arrays SI9926CDY-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore, Singapore
20V 8A MOSFET Transistor
278-SI9926CDY-T1-GE3
20V 8A MOSFET Transistor 278-SI9926CDY-T1-GE3
2-Ch N-Ch JFET, 20V, 8A, 18mR Rds On, SOP-8 Product overview: SI9926CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9926CDY-T1-GE3 can be used for catalog matching and distributor lookup.

2-Ch N-Ch JFET, 20V, 8A, 18mR Rds On, SOP-8 Product overview: SI9926CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9926CDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 20V Vds 12V Vgs SO-8

MOSFET 20V Vds 12V Vgs SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9926CDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9926CDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9926CDY-T1-GE3
MOSFET 2N-CH 20V 8A 8SOIC

MOSFET 2N-CH 20V 8A 8SOIC

Supplier's Site
FET, MOSFET Arrays - SI9926CDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI9926CDY-T1-GE3
FET, MOSFET Arrays SI9926CDY-T1-GE3
MOSFET 2N-CH 20V 8A 8-SOIC

MOSFET 2N-CH 20V 8A 8-SOIC

Supplier's Site Datasheet
Mosfet, Dual, N-Ch, 20V, 8A, Nsoic-8; Transistor Polarity Vishay - 50AC9668 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 20V, 8A, Nsoic-8; Transistor Polarity Vishay
50AC9668
Mosfet, Dual, N-Ch, 20V, 8A, Nsoic-8; Transistor Polarity Vishay 50AC9668
MOSFET, DUAL, N-CH, 20V, 8A, NSOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

MOSFET, DUAL, N-CH, 20V, 8A, NSOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 - 880-SI9926CDY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
880-SI9926CDY-T1-GE3
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 880-SI9926CDY-T1-GE3
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 028715-SI9926CDY-T1-GE3 SI9926CDY-T1-GE3TR-ND 278-SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 50AC9668 880-SI9926CDY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9926CDY-T1-GE3 FET, MOSFET Arrays 20V 8A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays Mosfet, Dual, N-Ch, 20V, 8A, Nsoic-8; Transistor Polarity Vishay Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 3100 milliwatts 3100 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3
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