MOSFET P-CH 20V 4.5A 8SO
P-CH MOSFET, -20V, 4.5A, 40mR Rds On, SOIC Product overview: SI9433BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 4.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 4.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9433BDY-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028714-SI9433BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: Si9433BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 40 mOhm @ 6.2A, 4.5V
Alternative Parts (Cross-Reference): TSM9433CS RL; TSM9433CS; IRF7404TRLPbF; DMP2066LSS;
Introduction Date: February 12, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 4.5A 8SO
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI9433BDY-T1-E3 | 278-SI9433BDY-T1-E3 | SI9433BDY-T1-E3TR-ND | 028714-SI9433BDY-T1-E3 | SI9433BDY-T1-E3 | 35K3497 | 57J5840 | SI9433BDY-T1-E3 |
| Product Name | Single FETs, MOSFETs | -20V 4.5A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9433BDY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet; Channel Type Vishay | P Channel Mosfet, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 4500 milliamps | 6200 milliamps | 6200 milliamps |
