P-Channel 60-V MOSFET in an SO-8 package, rated for a continuous drain current of -4.7 A at 25°C case temperature and -3.2 A at 25°C ambient temperature, with a drain-source on-state resistance of 0.120 Ω at -10 V gate-source voltage and 0.150 Ω at -4.5 V gate-source voltage. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Maximum junction temperature is 150°C, with a junction-to-ambient thermal resistance of 42°C/W typical. Tubular gate charge is 8 nC at -30 V drain-source voltage and -10 V gate-source voltage. The part is designed for primary side switching applications and is 100% avalanche tested.
MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC3352 |
| Product Name | Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay |
| Polarity | P-Channel |