Vishay Precision Group Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay SI9407BDY-T1-GE3.

Description
MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: No
Description
MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: No
Datasheet
Datasheet Summary
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P-Channel 60-V MOSFET in an SO-8 package, rated for a continuous drain current of -4.7 A at 25°C case temperature and -3.2 A at 25°C ambient temperature, with a drain-source on-state resistance of 0.120 Ω at -10 V gate-source voltage and 0.150 Ω at -4.5 V gate-source voltage. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Maximum junction temperature is 150°C, with a junction-to-ambient thermal resistance of 42°C/W typical. Tubular gate charge is 8 nC at -30 V drain-source voltage and -10 V gate-source voltage. The part is designed for primary side switching applications and is 100% avalanche tested.

Datasheet Summary
Powered by GS/AI

P-Channel 60-V MOSFET in an SO-8 package, rated for a continuous drain current of -4.7 A at 25°C case temperature and -3.2 A at 25°C ambient temperature, with a drain-source on-state resistance of 0.120 Ω at -10 V gate-source voltage and 0.150 Ω at -4.5 V gate-source voltage. The device is compliant with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Maximum junction temperature is 150°C, with a junction-to-ambient thermal resistance of 42°C/W typical. Tubular gate charge is 8 nC at -30 V drain-source voltage and -10 V gate-source voltage. The part is designed for primary side switching applications and is 100% avalanche tested.

Suppliers

Company
Product
Description
Supplier Links
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay - 26AC3352 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay
26AC3352
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay 26AC3352
MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: No

MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: No

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 26AC3352
Product Name Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay
Polarity P-Channel
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