Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8472DB-T2-E1 SI8472DB-T2-E1

Manufacturer: Vishay
Win Source Part Number: 1096291-SI8472DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Micro Foot (1x1)
Dimension: 4-UFBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 18nC @ 8V
Max Input Capacitance: 630pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 44 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Si8472DB Series N-Channel 20 V 44 mOhm Surface Mount Power Mosfet - MICRO FOOT Product overview: SI8472DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20 V, 44 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20 V, 44 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8472DB-T2-E1 can be used for catalog matching and distributor lookup.

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