Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1 SI8469DB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 1096290-SI8469DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-UFBGA Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 900pF @ 4V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 64 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Audio
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096290-SI8469DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-UFBGA Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 900pF @ 4V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 64 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Audio
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1 - 1096290-SI8469DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1
1096290-SI8469DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1 1096290-SI8469DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 1096290-SI8469DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-UFBGA Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 900pF @ 4V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 64 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Audio

Manufacturer: Vishay
Win Source Part Number: 1096290-SI8469DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-UFBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 900pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 64 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Audio

Buy Now Datasheet
Single FETs, MOSFETs - SI8469DB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8469DB-T2-E1TR-ND
Single FETs, MOSFETs SI8469DB-T2-E1TR-ND
P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8469DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8469DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8469DB-T2-E1
MOSFET P-CH 8V 4.6A 4MICROFOOT

MOSFET P-CH 8V 4.6A 4MICROFOOT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1096290-SI8469DB-T2-E1 SI8469DB-T2-E1TR-ND SI8469DB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 8 volts
PD 780 to 1800 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7484QTR - 1020729-AUIRF7484QTR - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 2500 milliwatts
View Details
5 suppliers
GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 4000 MHz
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C065040B3 - Acme Chip Technology Co., Limited
Specs
Package Type Surface Mount
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details
3 suppliers