MOSFET P-CH 8V 4.6A 4MICROFOOT Product overview: SI8469DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8469DB-T2-E1 can be used for catalog matching and distributor lookup.
P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
Manufacturer: Vishay
Win Source Part Number: 1096290-SI8469DB-T2-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-UFBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 900pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 64 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Audio
MOSFET P-CH 8V 4.6A 4MICROFOOT
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI8469DB-T2-E1 | SI8469DB-T2-E1TR-ND | 1096290-SI8469DB-T2-E1 | SI8469DB-T2-E1 |
| Product Name | 8V 4.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8469DB-T2-E1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 780 milliwatts | 780 to 1800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | 4-UFBGA | SOT3; 4-Microfoot | 4-UFBGA |
