Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-E3 SI7922DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028692-SI7922DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7922DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 8nC @ 10V Maximum Rds On at Id,Vgs: 195 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): IRFHM792TR2PBF; IRFHM792TRPBF; TPC8214-H(TE12L,Q); TPC8214-H(T2LSIS,Q; Introduction Date: November 05, 2002 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028692-SI7922DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7922DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 8nC @ 10V Maximum Rds On at Id,Vgs: 195 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): IRFHM792TR2PBF; IRFHM792TRPBF; TPC8214-H(TE12L,Q); TPC8214-H(T2LSIS,Q; Introduction Date: November 05, 2002 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-E3 - 028692-SI7922DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-E3
028692-SI7922DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-E3 028692-SI7922DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028692-SI7922DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7922DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 8nC @ 10V Maximum Rds On at Id,Vgs: 195 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): IRFHM792TR2PBF; IRFHM792TRPBF; TPC8214-H(TE12L,Q); TPC8214-H(T2LSIS,Q; Introduction Date: November 05, 2002 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028692-SI7922DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7922DN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 8nC @ 10V
Maximum Rds On at Id,Vgs: 195 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): IRFHM792TR2PBF; IRFHM792TRPBF; TPC8214-H(TE12L,Q); TPC8214-H(T2LSIS,Q;
Introduction Date: November 05, 2002
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI7922DN-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7922DN-T1-E3
FET, MOSFET Arrays SI7922DN-T1-E3
MOSFET 2N-CH 100V 1.8A 1212-8

MOSFET 2N-CH 100V 1.8A 1212-8

Supplier's Site Datasheet
FET, MOSFET Arrays - SI7922DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7922DN-T1-E3TR-ND
FET, MOSFET Arrays SI7922DN-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7922DN-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7922DN-T1-E3DKR-ND
FET, MOSFET Arrays SI7922DN-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7922DN-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7922DN-T1-E3CT-ND
FET, MOSFET Arrays SI7922DN-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
Singapore
SMD 100V 1.8A MOSFET Transistor
278-SI7922DN-T1-E3
SMD 100V 1.8A MOSFET Transistor 278-SI7922DN-T1-E3
N-CH MOSFET 100V 1.8A 195mR 2-Ch Surface Mount Product overview: SI7922DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7922DN-T1-E3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 100V 1.8A 195mR 2-Ch Surface Mount Product overview: SI7922DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7922DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual N Channel, 100V, 0.162Ohm, 1.8A, Powerpak, Full Reel; Transistor Polarity Vishay - 73W9421 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 100V, 0.162Ohm, 1.8A, Powerpak, Full Reel; Transistor Polarity Vishay
73W9421
Mosfet, Dual N Channel, 100V, 0.162Ohm, 1.8A, Powerpak, Full Reel; Transistor Polarity Vishay 73W9421
MOSFET, DUAL N CHANNEL, 100V, 0.162OHM, 1.8A, POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; On Resistance Rds(on):0.162ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 100V, 0.162OHM, 1.8A, POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; On Resistance Rds(on):0.162ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N Channel Mosfet, 100V, Powerpak; Transistor Polarity Vishay - 06J8182 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 100V, Powerpak; Transistor Polarity Vishay
06J8182
Dual N Channel Mosfet, 100V, Powerpak; Transistor Polarity Vishay 06J8182
DUAL N CHANNEL MOSFET, 100V, POWERPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.162ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 100V, POWERPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.162ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8

MOSFET 100V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7922DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7922DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7922DN-T1-E3
MOSFET 2N-CH 100V 1.8A PPAK 1212

MOSFET 2N-CH 100V 1.8A PPAK 1212

Supplier's Site
Transistor - 22258973 - Radwell International
Willingboro, NJ, United States
Transistor
22258973
Transistor 22258973
POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, POWERPAK 1212. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, POWERPAK 1212. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 028692-SI7922DN-T1-E3 SI7922DN-T1-E3 SI7922DN-T1-E3TR-ND 278-SI7922DN-T1-E3 73W9421 06J8182 SI7922DN-T1-E3 SI7922DN-T1-E3 22258973
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays SMD 100V 1.8A MOSFET Transistor Mosfet, Dual N Channel, 100V, 0.162Ohm, 1.8A, Powerpak, Full Reel; Transistor Polarity Vishay Dual N Channel Mosfet, 100V, Powerpak; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; PowerPAK 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual TO-3 TO-3 PowerPAKR 1212-8 Dual
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor - QPD0030 - Qorvo
Specs
Transistor Technology / Material DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details