40V P-CH MOSFET, 5A, 60mR, Dual Channel, SMT Product overview: SI7905DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7905DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 40V 6A PPAK 1212-8
Manufacturer: Vishay
Win Source Part Number: 1249548-SI7905DN-T1-
Family Name: Si7905DN
Manufacturer Homepage: www.vishay.com
Alternative Parts (Cross-Reference): DMP4050SSD; DMP4050SSD-13; Si7923DN-T1-GE3;
Introduction Date: February 07, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 40V 6A 20.8W Surface Mount PowerPAK® 1212-8 Dual
MOSFET 2P-CH 40V 6A PPAK 1212
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-SI7905DN-T1-GE3 | SI7905DN-T1-GE3 | 1249548-SI7905DN-T1-GE3 | SI7905DN-T1-GE3TR-ND | SI7905DN-T1-GE3 |
| Product Name | Dual 40V 5A MOSFET Transistor | FET, MOSFET Arrays | Electrical Parts - SI7905DN-T1-GE3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| PD | 2500 milliwatts | ||||
| TJ | -50 C (-58 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |