Manufacturer: Vishay
Win Source Part Number: 064580-SI7900AEDN-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 16nC @ 4.5V
Maximum Rds On at Id,Vgs: 26 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
TRANSISTOR 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power Product overview: SI7900AEDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 6 A, 20 V, 0.026 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 6 A, 20 V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7900AEDN-T1-G
MOSFET 2N-CH 20V 6A PPAK 1212-8
MOSFET 2N-CH 20V 6A PPAK 1212
MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064580-SI7900AEDN-T1-GE3 | SI7900AEDN-T1-GE3TR-ND | 2088-SI7900AEDN-T1-GE3 | SI7900AEDN-T1-GE3 | SI7900AEDN-T1-GE3 | 880-SI7900AEDN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7900AEDN-T1-GE3 | FET, MOSFET Arrays | N-Channel Dual 6 A 20 V MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Drain | |||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; PowerPAK 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
