Manufacturer: Vishay
Win Source Part Number: 028686-SI7892BDP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 3775pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel Power MOSFET, 30V, 15A, 4.2mR RdsOn Product overview: SI7892BDP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7892BDP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 15A PPAK SO-8
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5W RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028686-SI7892BDP-T1-E3 | SI7892BDP-T1-E3DKR-ND | 278-SI7892BDP-T1-E3 | SI7892BDP-T1-E3 | 64R4910 | 51K7006 | SI7892BDP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7892BDP-T1-E3 | Single FETs, MOSFETs | N-Channel 30V 15A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Channel Mosfet, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||||
| PD | 1800 milliwatts | 5000 milliwatts | 5000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
