Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7864ADP-T1-E3 SI7864ADP-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007609-SI7864ADP-T1 -E3 Drain to Source Voltage (Vdss): 20 V Number of Elements: 1 Power Dissipation: 1.9 W Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Rise Time: 44 ns Fall Time: 44 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 40 ns Continuous Drain Current (ID): 18 A Turn-Off Delay Time: 150 ns Drain to Source Resistance: 3 mΩ Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007609-SI7864ADP-T1 -E3 Drain to Source Voltage (Vdss): 20 V Number of Elements: 1 Power Dissipation: 1.9 W Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Rise Time: 44 ns Fall Time: 44 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 40 ns Continuous Drain Current (ID): 18 A Turn-Off Delay Time: 150 ns Drain to Source Resistance: 3 mΩ Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7864ADP-T1-E3 - 1007609-SI7864ADP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7864ADP-T1-E3
1007609-SI7864ADP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7864ADP-T1-E3 1007609-SI7864ADP-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007609-SI7864ADP-T1 -E3 Drain to Source Voltage (Vdss): 20 V Number of Elements: 1 Power Dissipation: 1.9 W Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Rise Time: 44 ns Fall Time: 44 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 40 ns Continuous Drain Current (ID): 18 A Turn-Off Delay Time: 150 ns Drain to Source Resistance: 3 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1007609-SI7864ADP-T1-E3
Drain to Source Voltage (Vdss): 20 V
Number of Elements: 1
Power Dissipation: 1.9 W
Weight: 506.605978 mg
Number of Channels: 1
Number of Pins: 8
Rise Time: 44 ns
Fall Time: 44 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.9 W
Turn-On Delay Time: 40 ns
Continuous Drain Current (ID): 18 A
Turn-Off Delay Time: 150 ns
Drain to Source Resistance: 3 mΩ
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1007609-SI7864ADP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7864ADP-T1-E3
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