Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7860DP-T1-E3

Description
MOSFET N-CH 30V 11A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 30V 11A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7860DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7860DP-T1-E3
Single FETs, MOSFETs SI7860DP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8

MOSFET N-CH 30V 11A PPAK SO-8

Supplier's Site Datasheet
Singapore
30V 11A MOSFET Transistor
278-SI7860DP-T1-E3
30V 11A MOSFET Transistor 278-SI7860DP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8 Product overview: SI7860DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7860DP-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 11A PPAK SO-8 Product overview: SI7860DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7860DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7860DP-T1-E3 - 111585-SI7860DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7860DP-T1-E3
111585-SI7860DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7860DP-T1-E3 111585-SI7860DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 111585-SI7860DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 111585-SI7860DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R - 880-SI7860DP-T1-E3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R
880-SI7860DP-T1-E3
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R 880-SI7860DP-T1-E3
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R

Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7860DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7860DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7860DP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8

MOSFET N-CH 30V 11A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7860DP-T1-E3 278-SI7860DP-T1-E3 111585-SI7860DP-T1-E3 880-SI7860DP-T1-E3 SI7860DP-T1-E3
Product Name Single FETs, MOSFETs 30V 11A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7860DP-T1-E3 Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 11000 milliamps
PD 1800 milliwatts 1800 milliwatts 1800 milliwatts 1800 milliwatts
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