80V 7.6A N-CH MOSFET, 16.5mR Rds On, 1.9W PD, SO-8 Product overview: SI7852DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 7.6A, 1.9W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7.6A, 1.9W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7852DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 322837-SI7852DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 41nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 80V 7.6A PPAK SO-8
MOSFET, N-CH, 80V, 12.5A, 150DEG C, 1.9W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
80V 7.6A 16.5mΩ@10V,10A 1.9W 2V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
MOSFET N-CH 80V 7.6A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7852DP-T1-GE3 | 322837-SI7852DP-T1-GE3 | SI7852DP-T1-GE3DKR-ND | SI7852DP-T1-GE3 | SI7852DP-T1-GE3 | 63W4151 | SI7852DP-T1-GE3 | SI7852DP-T1-GE3 |
| Product Name | 80V 7.6A 1.9W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-GE3 | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 12.5A, 150Deg C, 1.9W; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 |
