MOSFET 2N-CH 30V 6.4A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 1096202-SI7844DP-T1-
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 6.4A PPAK SO-8
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7844DP-T1-GE3 | 1096202-SI7844DP-T1-GE3 | SI7844DP-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7844DP-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 6400 milliamps |
