75V 16A N-CH MOSFET, 37mR Rds On, PowerPAK Product overview: SI7812DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7812DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 75V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 75V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 75V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 042623-SI7812DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 840pF @ 35V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 7.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET N-CH 75V 16A PPAK1212-8
N CHANNEL MOSFET, 75V, 16A POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:3.8W RoHS Compliant: Yes
N CHANNEL MOSFET, 75V, 16A POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes
MOSFET N-CH 75V 16A PPAK1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7812DN-T1-GE3 | SI7812DN-T1-GE3TR-ND | 042623-SI7812DN-T1-GE3 | SI7812DN-T1-GE3 | 33P5429 | 26R1935 | SI7812DN-T1-GE3 |
| Product Name | 75V 16A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7812DN-T1-GE3 | Single FETs, MOSFETs | N Channel Mosfet, 75V, 16A Powerpak, Full Reel; Channel Type Vishay | N Channel Mosfet, 75V, 16A Powerpak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| PD | 3800 milliwatts | 3800 to 52000 milliwatts | 3800 milliwatts | 3800 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 |
