Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7774DP-T1-GE3

Description
N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7774DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7774DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7774DP-T1-GE3TR-ND
N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7774DP-T1-GE3 - 1096195-SI7774DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7774DP-T1-GE3
1096195-SI7774DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7774DP-T1-GE3 1096195-SI7774DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096195-SI7774DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 2630pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096195-SI7774DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 2630pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET 30V 60A N-CH MOSFET w/Shottky - 880-SI7774DP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 30V 60A N-CH MOSFET w/Shottky
880-SI7774DP-T1-GE3
MOSFET 30V 60A N-CH MOSFET w/Shottky 880-SI7774DP-T1-GE3
MOSFET 30V 60A N-CH MOSFET w/Shottky

MOSFET 30V 60A N-CH MOSFET w/Shottky

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7774DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7774DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7774DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8

MOSFET N-CH 30V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7774DP-T1-GE3TR-ND 1096195-SI7774DP-T1-GE3 880-SI7774DP-T1-GE3 SI7774DP-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7774DP-T1-GE3 MOSFET 30V 60A N-CH MOSFET w/Shottky Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 2630 pF @ 15 V
V(BR)DSS 30 volts 30 volts
PD 5000 to 48000 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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