Manufacturer: Vishay
Win Source Part Number: 1096195-SI7774DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 2630pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 30V 60A PPAK SO-8
MOSFET 30V 60A N-CH MOSFET w/Shottky
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096195-SI7774DP-T1-GE3 | SI7774DP-T1-GE3TR-ND | SI7774DP-T1-GE3 | 880-SI7774DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7774DP-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30V 60A N-CH MOSFET w/Shottky |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 5000 to 48000 milliwatts | 5000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | 2630 pF @ 15 V |
