Vishay Intertechnology, Inc. SMD 30V 35A MOSFET Transistor SI7726DN-T1-GE3

30V 35A N-CH MOSFET, 9.5mR Rds On, Surface Mount Product overview: SI7726DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7726DN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Manufacturer: Vishay
Win Source Part Number: 103163-SI7726DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Family Name: Si7726DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1765pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): AP0903GYT-HF; NTTFS4928NTAG; NTTFS4928NTWG;
Introduction Date: August 07, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance