MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay
Win Source Part Number: 131279-SI7655DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 225nC @ 10V
Max Input Capacitance: 6600pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET, P CHANNEL, -20V, POWERPAK 1212-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:500mV RoHS Compliant: Yes
MOSFET, P-CH, -20V, POWERPAK 1212-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:57W RoHS Compliant: Yes
MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III
MOSFET P-CH 20V 40A PPAK1212-8S
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7655DN-T1-GE3 | 131279-SI7655DN-T1-GE3 | SI7655DN-T1-GE3TR-ND | 04X9768 | 74W0700 | SI7655DN-T1-GE3 | SI7655DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7655DN-T1-GE3 | Single FETs, MOSFETs | Mosfet, P Channel, -20V, Powerpak 1212-8; Channel Type Vishay | Mosfet, P-Ch, -20V, Powerpak 1212-8, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 40000 milliamps | 40000 milliamps | 40000 milliamps |
